Silicon Field Effect Transistor (ncSiFET) in BEOL

Silicon Field Effect Transistor (ncSiFET) in BEOLTremendous research efforts ar ongoing in orderliness to implement and add pull ahead executealities to computing compounds in CMOS chips. Thus, a scrap is imposed to compete the existing devices in terms of comprise and exploit. In this project, I propose a novel and dispirited approach approach for nanocrystalline Silicon Field Effect Transistor (ncSiFET) based shop chooser switch utilise in BEOL. During this thesis, the likelyity of this technology in terms of performance and production be will be established.Targeted technological applications Memory selector electronic junction transistorOne of our research group activities in 3IT consists on the development and integ dimensionn of RRAM with a Complementary Resistive Switch (CRS) planar con public figureuration in the BEOL of CMOS circuit. My research activity will focuses on entrepot selector assemblage needed to carry start the read operation as subsequent an d complementary function. Several technological approaches sustain been proposed to fulfill this function with opposite physical concepts, such as diodes, volatile switches, nonlinear devices and transistors. (cf. figure I.1). Owing to the planar configurtion and the nanodamascence fabrication approach of RRAM, our transistor device (ncSiFET) will benefit from the work on compatibility, so that it placenister be implemented in 3D BEOL integration and connected in serial to minimize parasitic wetting pass on-day(prenominal) from unselected cells during a read operation,to admit sufficient on- f pitiable for the switching of the selected cell and to prevent frequent hurly burly operation and readout errors. The selector and the shop element should be matched in term of scalability to enable restrain leakage current from the unselected computer memory elements along read and write operations.The requirements for a RRAM selector present several challenges for appropriate i ntegration in a low-cost CMOS-compatible stackable cognitive operation. A low processing temperature under(a) 400 C must be priseed to enable the compatibility with 3-D integration in BEOL. The carrying out of selector devices requiring additional process ill-uses is accompanied with macroscopical device atomic number 18a and power dissipation. Moreover, the selector devices tail end subject a decrease in the current and a slower read operation. A compatibility in terms of in terms of operation polarity (unipolar/bipolar) and switching speed between memory elements and selector devices must be established 2. Others aspects concerning the reliability such as cycling endurance and discrepancy should be taken in consideration.Required electrical performancesA candid selector needs to fit multiple requirements which atomic number 18 essentially derived from circuit performance aspect. The previously achieved on/off ratio =104 with our (ncSiFET) 3 can be an asset for memor y selector applications since it is on a par with many atomic number 14 transistor based selectors 4. This ratio should be improved up to 106, to and enable the operation of large arrays in the architecture. Moreover, a 2.5 A/m value as on-current in our device 3, which can be further sharpend, fits well with the range of requirement to sufficiently control the memory operation without speed restriction 5. season threshold voltage needs to be minimized to enable the reduction of the operation leakage. These properties makes the transistor an potent selector as isolation switch and current limiter. A selector should be able to provide enough causal agency current as needed for chastise and RESET operations of the resistive memory cell. Interestingly, a threshold switching selector device has proved to be efficient for solving the leakage current problem with a low off current Taking all these considerations in account, unitary can say that (ncSiFET) device owns promising chara cteristics and relevant potential to be integrated in BEOL for RRAM memory selection applications. In table I.1, we present further characteristics in as speed, temperature and electrical performances that should be overly taken in account during the development of our device.Comparison with technological competitorSilicon transistor based selector The main advantages for this kind of transistors that enable self-compliance are their gritty-pitched ON/OFF ratio with large drive current, appropriate threshold voltage and low power consumption. However, transistor-based selectors present drawbacks in terms of large dimensions and manifold process fabrication 4. Poly-Si secular has been replaced by in broad(prenominal) spirits quality epitaxial PN portions on crystalline Si, in order to achieve high Ion/Ioff ratio up to 108 and large on current over 10MA/cm2 beneficial for SET/ RESET operation and rectifiying ability 7, but, these unipolar configurations are not compatible wit h bipolar switching path resistive memories. The NPN building has been proposed to overcome the polarity issue with I on /I off ratio of more or little 4700 8. However, the main limit for these technologies is their high process temperature, thus, unsuitable for sub-400 -C BEOL integration. Metal-oxide schottky diodes Different compositions of rise and oxides, such as Pt/HfO 2 /ZrO 2 /TiN or Ni/TiO 2 /Ni have been proposed 6. The conduction apparatus assumed to be based on Schottky emission at the mateal/oxide interfaces 8. It was demonstrate that (MIM) incorporating disregard oxide exact can provide non-linear I-V curve. These configurations are compatible with bipolar switching and suitable with 3D-stackable BEOL integration. However, only low drive current density of about 1MA/cm2 is knock overed. Nonlinear devices Considering the requirement to achieve both high current at high voltage as well as very small current comparable to low voltages, nonlinear devices have been proposed.For all the varieties of this category presented in fig.1, the complexity of fabrication process and the material selection remain difficult challenges for large area production and integration 4. Thin read transistor (TFT) As an example, RRAM (Ti/Oxide stack/Pt) connected with thin film transistor (transparent uncrystallized oxide semiconductor (TAOS)) architecture demonstrated good results as current limiter with a storage capability controlled by the amplitude of the TFT furnish voltage 2. The TFT as a technology benefit from the reduced temperature, relatively simple and low cost fabrication process. However, carriers mobility in the enchant is the main issue that cause significant impact on the electrical properties of the resulting device. The transistor performances are severely extend toed by high defects density and carrier trap sites which powerfully depend on the crystallinity, the quality of silicon thin film (a-Si, Poly-S or nc-Si). This is a common subtle to our ncSi demarcation. (ncSiFET) Our proposed transistor technology is based on nanodamascene approach, with a nanocrystalline silicon island as a channel spaced from metal S/D by a thin tunnel oxide. A proof of feasibility with promising electrical performance is already demonstrated 3. The overall process will be performed at low temperature (The aim of this project is to perform a cost-effective selector device compatible with our resources at 3IT. In this framework, strain effects are quite of import for electronic transport in the channel, in other word, switch frequency and the reliability over time. Thus, this important aspect should be taken in account in order to establish the transistor characteristics and to fulfill the requirement for the realization and the application as a memory selector device. One of our project targets is to establish a strain method compatible with high-k/metal top accession configuration. Strained channel should be carefully design ed through process conditions and device geometry.Channel equilibrium strain effects Residual strain could be either mechanized/intrinsic during the film growth and upon technological process or thermal out-of-pocket the differences in expansion coefficient between materials or the auto-heating during the device operation. a) On transport properties in conductor channel For crystalline silicon channel, the strain in the channel of nanotransistor leads to the stretching of atoms bonding in silicon grade. The displacement of silicon atoms can reduces the impact of atomic forces that interfere with the electrons movement and weaken scattering phenomena allowing lower resistance and remediate mobility (cf. fig II.1). Charge carriers can move faster in the strained channel resulting in give conductivity and low power consumption. In fact, stress induces a change and degeneracy in the energy rafts take aim of the silicon atoms, ca utilise an anisotropy in effective draw of elect rons. Then, light mass and minimal scattering are the main factors for remedy mobility (= e/m*) 1. Due to this anisotropy, the effect of strain depends on its direction with respect to the source-drain current path 2. On the other hand, the deposition process of nSi-thin film leads to residual strain in the layer ( malleable or compressive). For example, it was describe that the conductance of the amorphous material a-Si H channel in TFT transistor maturations with tensile stress while it decrease with compressive wizard 3.In our nc-SiFET device, channel consists on isolated nc-Si 50nm-length and less than 20nm-thick island deposited and patterned using a combination of e-beam lithography and ICP-etching process. This channel embedded in nanopattern undergo a thermal annealing and Ti metal deposition before (CMP) polishing process leading to confined island from both side of the metal nanowires. Dielectric admittance layers (Si 3 N 4 ) or high-k insulator (HfO 2 , Al 2 O 3 ) ca n be incorporated on the top of the structure in our process followed by gate deposition. In our project, metals materials can be deposited using evaporation or sputtering techniques, whereas, insulator layers can be fabricated by PECVD, LPCVD, sputtering or ALD. It is worthy to note that the induced residual strain of each region strongly depend on the choice of the deposition technique, process parameters, layer thickness as well as thermal post treatment. All these process specifications strongly affect the transport properties of the channel. Hence, a careful analysis of the channel mobility based on Hall effect measurements as a function of different process specification should be addressed (figure II.2). A design of experiments would be performed jointly with the process fabrication.In this framework, several local strain techniques have been employed that can resemble our project. It was reported that shallow trench isolation technique -or box isolation technique- consistin g on a sequence of trenches patterning to be filled by a deposited materials and removal of excess places using CMP, creates isolation and can do compressive stress on the channel 5. Also, SiN capping layers on top of the gate with intrinsic stress can induce strain into MOS channels and enlarge the distance between atoms underneath the gate which enhance the electron mobility 6. Based on these reported results, we can assume that our sequence of fabrication processes can induce further stress on the nanocrystallline silicon island channel. In order to precisely identify the effects of strain on our (ncSiFET) channel transport, we should take in account the contribution of all the steps that can take part of the channel residual strain in our process i.e nanoscale island embedded in the trench, thermal annealing, chemical windup(prenominal) polishing and the effect of capping layer stack.On conduction mechanism between the electrical contacts and active regionThe strain in the ac tive layer of the channel can induce variations in terms of bunch gap, electrons effective mass, affinity and the density of states. It is proved that strain can cause a local band gap shrinking and a change in bands form along the channel 7. Based on Kane model for band to band tunneling, the current is a function of band gap and effective mass change 8. Hence, we can assume that the induced strain in our island channel can promote the conduction mechanism by direct tunneling through the potential barrier lowering. For our structure, inducing strain in (ncSi) channel can alter the potential barrier, state density and charge population between the thin tunnel oxide / ncSi interface as well as the gate dielectric/ncSi interface in our (ncSiFET) device. The reduction of a-Si island underground can enhance the contact resistance between the island and Ti source and drain terminals.I.2 Deposition methods relation In our case, the channel is a nanodimensional island deposited in a tr ench. For such nano-topography, uniform thickness on non-planar surfaces with step conformal coverage, space filling and damage-free process are required. In general, the evolution of stresses in thin films is a ever-changing competition between tensile and compression effects during deposition. The strain in the film depends on different criteria such as grains coat, micovoids, disorder. species mobility and deposition rate. Stress varies significantly with process conditions. At 3IT, several deposition techniques are available either chemical of physical based processes. We discuss the implications of each techniques on the nanodimensional (nc-Si) island strain as well as distribution and filling aspect.LPCVD based on heat activation at high temperature (500 C). Low gas pressure reduce gas-phase reaction which lead to low deposition rate and cause particle clusters. LPCVD Si thin film are isotropic and compact, but with brusk step coverage 9. Such high temperature and low depo sition rate lead to the relaxation of the ordered film and thus, the obliteration of strain effect. Thermal or e-beam evaporation requires heating or electron bombardement of source material to pip evaporation and transform into the gaseous phase (low energy atoms 0.1 eV) and then condensed and adsorbed on the substrate surface. The deposited film is characterised by poor uniformity and density with stoichiometrical problem due to the diffference in vapor pressure 9. This process is better dedicated to thin film rather thick one, and chracterised by small strain effect at the initial stage of the growth 10.Sputtering employs the bombardment of a solid target by indefatigable particles gas ions (1 10 eV). Despite the good uniformity and stochiometry, this process gives rise to dense film with poor directionality 9. In sputtered films, the ion bombardment of the surface at the initial stage of the film growth may lead to high strain aspect consisting on quite large compressive s tresses where a tendency of film edges expansion is contracted back by the substrate 11.PECVD species decomposition can be carried out at lower temperatures (around 300 C) with high deposition rates and energetic species with high sticking coefficient. This process provides good film quality with conformal aspect and good step coverage 9. The resulting film at such low temperature and high deposition rate is prevented from relaxation and remains in strain, unlike high temperature process. Moreover, similar to sputtering technique ion bombardement may lead to further strain. The lack of surface diffusion may induce a high voids concentration which induce further strain in the film 10. The interaction of atoms in the channel amorphous silicon film creates tensile strain, whereas the insertion of atoms causes compressive stresses 12. Taking all the mentionned specifications, we may confirm the potential of PECVD technique to fabricate for nanodimensional ncSi channel island in nanotre nch with relateing strain characteristics.In order to fulfill the cost and performance requirements of (ncSiFET) transistor for memory selector application (vs state of the art), process development and device profit are demanded. In this project, we pay special attention to physical dimensions and materials properties that determine the characteristics of our devices.Improvements of (ncSiFET) transistorCes reponses sont a relier avec l optiisation deja evoque a la question2Before citing the general strategy for device improvements, we present in figure III.1 the proposed structure accompagned with an overview about the electrical characteristics of (ncSiFET) transistor.*Channel enlarge the grains size (80nm), minimize defects density inside the grain = optimization of a-Si deposition + RTA annealing + post-deposition H 2 plasma /Ge incorporation-form narrow channel of about 100 nm in the range grain size, making sure to avoid the effects of the bypass channels = EBL patterning of 100nm-box size*Tunnel oxide longer exposure duration up to 2 h to ambient air + annealing = more compact film with less defects and better stoichiometry*Gate dielectric -minimize EOT and increase of Cox = implementation of high-K(20) ALD HfO 2-reduce defects at high-K ox/ncSi formation for plasma induced layer rather of native SiO x = N 2 pretreatment before ALD + anneal for adhesion and interface species desorption*Top gate -minimize source/ top Al gate Loverlap =EBL3 design +alignment*Metal S/D less tunnel oxide consumption due to metal contact= replacing Ti with TiN S/D sputtering + annealing for better contact resistance and ohmic contact* Minimize parasitic capabilitys (Cgs, Cgd, Cp) (MIM) to enhance switching frequency (f c )Semi-quantitative aspects*Ion (better channel mobility, less Dit , optimized strain, lower barrier/contact resistance, better tunnel)Based on coulomb diamond measurements and comsol simulation, replacing the lateral/back gates previously pick out wi th 86nm SiO 2 as gate dielectric by a top gate with thinner gate dielectric 62.*Ioff We need to maintain I off range or slightly improve it with minimizing Ntrap or adopt slightly longer channel (100nm)*S.S (Small EOT5nm , higher Cox , reduced gate overlap , better interfaces) An increase of gate stack capacitance Cg allows better gate modulation at low Vgs, high carriers density in the channel, leading to high performance and low power consumption. The gate dielectric capacitance is described as follow whereas the equivalent oxide thickness for high-K dielectric is expressed as. As an estimation an twist for subthreshold swing parameter is given asReplacing the 86nm SiO 2 (K=3.9) by a 20nm HfO 2 (K20) as gate dielectric, leads to a EOT=4.87 and an increase of C ox by a factor (x18). Thus, S.S can reach 250mV/dec.Comparaison a-Si PECVD vs. a-Si LPCVD At 3IT, chemical deposition techniques, mainly LPCVD and PECVD are employed for silicon thin layer growth. It is important for our pr oject to distinguish the relevant film properties, as well as, the implication on device performance for each technique.Electrical Properties In general, amorphous silicon thin films deposited by PECVD at low temperature (200-300C) are disordered with a defect density in the range of 1018 cm-3 and hopping based conduction mechanism. The resulting film are usually under stress due to high deposition rate and ion bombardment. Whereas, LPCVD films deposited at relatively high temperature (600C) are more ordered with a lower defect density of about 1015 cm-3 and activation conduction mechanism 4. Due to high temperature and low deposition rate a relaxation occurs in the film leading to low strain effect. Low field mobility of about 0.1-1cm2 V-1 S-1 in such amorphous material is mainly attributed to punctual defects such dangling bonds and dislocations. Different other allotropic varieties are of interest for our channel mainly polycrystalline and nanocrystalline silicon can be obtained depending on process parameters. On one hand, poly-Si consists on a network of crystalline grains randomly oriented and separated by grains boundaries which are regions with high defects and dangling bonds concentrations. On the other hand, nc-Si film are formed by crystalline grains of nanoscale size ( 50 nm-diameter) incorporated in an amorphous matrix with a grain crystalline fraction of up to 60% 5. These changes in crystalline phase and microstructure imply a significant enhancement in field mobility from 50 up to 300cm2 variation of film microstructure along depth can be manifested, where the interface (nucleation phase) is formed a dominant amorphous phase or very small grains, but, as the growth evolves and the film becomes thicker, the size of the grains increases 6. This difference in structure between the interface and the bulk of the film may have implications on electrical conduction, since carriers moving through amorphous phases, result in low mobility, whereas, the t ransport through the large grain give rise to high mobility (figure III.1) For our ncSi channel thin film(Impact on device performances In similar case to our ncSi channel, it was demonstrated, that the main origins of mobility degradation in poly-Si channel are Coulomb scattering due to defects inside the grain (D it ) -point defects or dislocations- or defects at the grain boundaries (Ntrap), as well as the surface roughness at the ncSi / gate oxide interface (Nit). On the one hand, defects inside the grains as the dominant control factor on electrons mobility control the on-current (Ion) value. On the other hand, defects at the grain boundaries (Ntrap) generate a Trap-Assisted Tunneling (TAT) mechanism in the (ncSi) channel, which degrades the off-current (Ioff) and the value of (S.S). Moreover, the traps at the interface (Nit) reduce the control of the grid which strongly affects (S.S) and (Ion) 7.